Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance-Enhanced Ion-Sensitive Field-Effect Transistors.

Cui H, Zheng K, Knoch J, Ingebrandt S

DOI: 10.1002/smll.75853
Published: 2026 Sep 25
Container: Small (Weinheim an der Bergstrasse, Germany)
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smll.75853,
  title = {Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance-Enhanced Ion-Sensitive Field-Effect Transistors.},
  author = {Cui H and Zheng K and Knoch J and Ingebrandt S},
  year = {2026},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.75853},
  url = {https://doi.org/10.1002/smll.75853}
}

RIS

TY  - JOUR
TI  - Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance-Enhanced Ion-Sensitive Field-Effect Transistors.
AU  - Cui H
AU  - Zheng K
AU  - Knoch J
AU  - Ingebrandt S
PY  - 2026
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.75853
UR  - https://doi.org/10.1002/smll.75853
ER  -

APA

H, C., K, Z., J, K., & S, I. (2026). Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance-Enhanced Ion-Sensitive Field-Effect Transistors.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.75853

Source records

pubmed · retrieved 2026-09-25T20:14:29.158Z