Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO(2) Films Enabled by Interfacial Engineering.

Hu X, Wang X, Songjian K, Liu Z, Ning Z, Zhong Y, Shen B, Jiang A

Open source

DOI
10.1002/smll.75990
Published
2026 Sep 26
Container
Small (Weinheim an der Bergstrasse, Germany)
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1002/smll.75990,
  title = {Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO(2) Films Enabled by Interfacial Engineering.},
  author = {Hu X and Wang X and Songjian K and Liu Z and Ning Z and Zhong Y and Shen B and Jiang A},
  year = {2026},
  journal = {Small (Weinheim an der Bergstrasse, Germany)},
  doi = {10.1002/smll.75990},
  url = {https://doi.org/10.1002/smll.75990}
}

RIS

TY  - JOUR
TI  - Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO(2) Films Enabled by Interfacial Engineering.
AU  - Hu X
AU  - Wang X
AU  - Songjian K
AU  - Liu Z
AU  - Ning Z
AU  - Zhong Y
AU  - Shen B
AU  - Jiang A
PY  - 2026
JO  - Small (Weinheim an der Bergstrasse, Germany)
DO  - 10.1002/smll.75990
UR  - https://doi.org/10.1002/smll.75990
ER  - 

APA

X, H., X, W., K, S., Z, L., Z, N., Y, Z., B, S., & A, J. (2026). Multistate Ferroelectric Memory for in-Memory Differential Computing in C‑Axis‑Oriented HZO‑ZrO(2) Films Enabled by Interfacial Engineering.. Small (Weinheim an der Bergstrasse, Germany). https://doi.org/10.1002/smll.75990

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