Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning
- DOI
- 10.1002/smsc.202300306
- Published
- 2024-03-03
- Container
- Small Science
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/smsc.202300306,
title = {Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning},
author = {Wenkui Zhang and Jun Li and Mengjiao Li and Yi Li and Hong Lian and Wenqing Gao and Benxiao Sun and Fei Wang and Lian Cheng and Hanqi Yu and Lianghao Chen and Jianhua Zhang},
year = {2024},
journal = {Small Science},
doi = {10.1002/smsc.202300306},
url = {https://doi.org/10.1002/smsc.202300306}
}RIS
TY - JOUR TI - Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning AU - Wenkui Zhang AU - Jun Li AU - Mengjiao Li AU - Yi Li AU - Hong Lian AU - Wenqing Gao AU - Benxiao Sun AU - Fei Wang AU - Lian Cheng AU - Hanqi Yu AU - Lianghao Chen AU - Jianhua Zhang PY - 2024 JO - Small Science DO - 10.1002/smsc.202300306 UR - https://doi.org/10.1002/smsc.202300306 ER -
APA
Zhang, W., Li, J., Li, M., Li, Y., Lian, H., Gao, W., Sun, B., Wang, F., Cheng, L., Yu, H., Chen, L., & Zhang, J. (2024). Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning. Small Science. https://doi.org/10.1002/smsc.202300306
Source records
- crossref · retrieved 2026-11-10T17:54:10.601Z