Ambipolar Transistors Based on Vertical Heterojunctions for Multivalued Logic Gates
- DOI
- 10.1002/smsc.70389
- Published
- 2026-11
- Container
- Small Science
- Publisher
- Wiley
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/smsc.70389,
title = {Ambipolar Transistors Based on Vertical Heterojunctions for Multivalued Logic Gates},
author = {Ke Zhou and Shengnan Liu and Yucai Yuan and Jiawei Hong and Zhixiang Ren and Yaxiao Lian and Xiaotao Zhang and Wentao Xiong and Chen Zou and Baodan Zhao and Wenping Hu and Dawei Di},
year = {2026},
journal = {Small Science},
doi = {10.1002/smsc.70389},
url = {https://doi.org/10.1002/smsc.70389}
}RIS
TY - JOUR TI - Ambipolar Transistors Based on Vertical Heterojunctions for Multivalued Logic Gates AU - Ke Zhou AU - Shengnan Liu AU - Yucai Yuan AU - Jiawei Hong AU - Zhixiang Ren AU - Yaxiao Lian AU - Xiaotao Zhang AU - Wentao Xiong AU - Chen Zou AU - Baodan Zhao AU - Wenping Hu AU - Dawei Di PY - 2026 JO - Small Science DO - 10.1002/smsc.70389 UR - https://doi.org/10.1002/smsc.70389 ER -
APA
Zhou, K., Liu, S., Yuan, Y., Hong, J., Ren, Z., Lian, Y., Zhang, X., Xiong, W., Zou, C., Zhao, B., Hu, W., & Di, D. (2026). Ambipolar Transistors Based on Vertical Heterojunctions for Multivalued Logic Gates. Small Science. https://doi.org/10.1002/smsc.70389
Source records
- crossref · retrieved 2026-11-09T07:39:19.723Z