Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures.

Satheesh S, Bernard A, Naimer T, Knöckl E, Taniguchi T, Watanabe K, Fabian J, Holleitner A, Kastl C, Burghard M.

DOI: 10.1002/smsc.70404
Published: 2026-09-18
Container: Small Sci
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1002/smsc.70404,
  title = {Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures.},
  author = {Satheesh S and  Bernard A and  Naimer T and  Knöckl E and  Taniguchi T and  Watanabe K and  Fabian J and  Holleitner A and  Kastl C and  Burghard M.},
  year = {2026},
  journal = {Small Sci},
  doi = {10.1002/smsc.70404},
  url = {https://doi.org/10.1002/smsc.70404}
}

RIS

TY  - JOUR
TI  - Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures.
AU  - Satheesh S
AU  -  Bernard A
AU  -  Naimer T
AU  -  Knöckl E
AU  -  Taniguchi T
AU  -  Watanabe K
AU  -  Fabian J
AU  -  Holleitner A
AU  -  Kastl C
AU  -  Burghard M.
PY  - 2026
JO  - Small Sci
DO  - 10.1002/smsc.70404
UR  - https://doi.org/10.1002/smsc.70404
ER  -

APA

S, S., A, B., T, N., E, K., T, T., K, W., J, F., A, H., C, K., & M., B. (2026). Gate-Tunable Remnant Anomalous Hall Effect in Dual-‍Proximity Graphene Heterostructures.. Small Sci. https://doi.org/10.1002/smsc.70404

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europe-pmc · retrieved 2026-09-25T03:12:18.989Z