Effect of Channel Thickness on Amorphous In─Ga─Zn─O‐Thin‐Film Transistors

Hanjun Cho, Hiroshi Okanishi, Masato Sasase, Masatake Tsuji, Hideo Hosono

Open source

DOI: 10.1002/smsc.70432
Published: 2026-11
Container: Small Science
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smsc.70432,
  title = {Effect of Channel Thickness on Amorphous In─Ga─Zn─O‐Thin‐Film Transistors},
  author = {Hanjun Cho and Hiroshi Okanishi and Masato Sasase and Masatake Tsuji and Hideo Hosono},
  year = {2026},
  journal = {Small Science},
  doi = {10.1002/smsc.70432},
  url = {https://doi.org/10.1002/smsc.70432}
}

RIS

TY  - JOUR
TI  - Effect of Channel Thickness on Amorphous In─Ga─Zn─O‐Thin‐Film Transistors
AU  - Hanjun Cho
AU  - Hiroshi Okanishi
AU  - Masato Sasase
AU  - Masatake Tsuji
AU  - Hideo Hosono
PY  - 2026
JO  - Small Science
DO  - 10.1002/smsc.70432
UR  - https://doi.org/10.1002/smsc.70432
ER  -

APA

Cho, H., Okanishi, H., Sasase, M., Tsuji, M., & Hosono, H. (2026). Effect of Channel Thickness on Amorphous In─Ga─Zn─O‐Thin‐Film Transistors. Small Science. https://doi.org/10.1002/smsc.70432

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crossref · retrieved 2026-11-07T03:24:55.514Z