Cryogenic‐Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra‐High Selectivity of Atomic Layer Etching Between SiO <sub>2</sub> and SiN

Shih‐Nan Hsiao, Makoto Sekine, Ryutaro Suda, Yoshihide Kihara, Masaru Hori

Open source

DOI: 10.1002/smtd.202501744
Published: 2025-11-22
Container: Small Methods
Publisher: Wiley
Open access: unknown

Credibility signals

uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

supportingDOI registered: A matching record was returned by Crossref. Source: Crossref; license: CC0 metadata
supportingDOI resolves: A matching record was returned by Crossref. Source: Crossref; license: CC0 metadata
not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility. Source: DOAJ; license: CC0
not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredROR affiliation: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete. Source: Retraction Watch; license: CC BY 4.0
not scoredOpen access status: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication license: Not checked or no result supplied; no credibility inference made. Source: No authority result supplied; license: Unknown
not scoredPublication version: A publication version was supplied but is not scored. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer
supportingMetadata completeness: All 6 scored descriptive metadata groups are present. Source: Normalized work metadata; license: Caller-provided; provenance license not supplied to scorer

Cite this work

BibTeX

@article{allodium:10.1002/smtd.202501744,
  title = {Cryogenic‐Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra‐High Selectivity of Atomic Layer Etching Between SiO
                    <sub>2</sub>
                    and SiN},
  author = {Shih‐Nan Hsiao and Makoto Sekine and Ryutaro Suda and Yoshihide Kihara and Masaru Hori},
  year = {2025},
  journal = {Small Methods},
  doi = {10.1002/smtd.202501744},
  url = {https://doi.org/10.1002/smtd.202501744}
}

RIS

TY  - JOUR
TI  - Cryogenic‐Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra‐High Selectivity of Atomic Layer Etching Between SiO
                    <sub>2</sub>
                    and SiN
AU  - Shih‐Nan Hsiao
AU  - Makoto Sekine
AU  - Ryutaro Suda
AU  - Yoshihide Kihara
AU  - Masaru Hori
PY  - 2025
JO  - Small Methods
DO  - 10.1002/smtd.202501744
UR  - https://doi.org/10.1002/smtd.202501744
ER  -

APA

Hsiao, S., Sekine, M., Suda, R., Kihara, Y., & Hori, M. (2025). Cryogenic‐Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra‐High Selectivity of Atomic Layer Etching Between SiO <sub>2</sub> and SiN. Small Methods. https://doi.org/10.1002/smtd.202501744

Source records

crossref · retrieved 2026-09-26T23:30:31.372Z