Solution‐Processed Submicron‐Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V

Kai Xu, Chenxu Sheng, Dacheng Xia, Zhi‐Jun Qiu, Chunxiao Cong, Ran Liu, Laigui Hu

Open source

DOI: 10.1002/smtd.70740
Published: 2026-05-24
Container: Small Methods
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smtd.70740,
  title = {Solution‐Processed Submicron‐Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V},
  author = {Kai Xu and Chenxu Sheng and Dacheng Xia and Zhi‐Jun Qiu and Chunxiao Cong and Ran Liu and Laigui Hu},
  year = {2026},
  journal = {Small Methods},
  doi = {10.1002/smtd.70740},
  url = {https://doi.org/10.1002/smtd.70740}
}

RIS

TY  - JOUR
TI  - Solution‐Processed Submicron‐Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V
AU  - Kai Xu
AU  - Chenxu Sheng
AU  - Dacheng Xia
AU  - Zhi‐Jun Qiu
AU  - Chunxiao Cong
AU  - Ran Liu
AU  - Laigui Hu
PY  - 2026
JO  - Small Methods
DO  - 10.1002/smtd.70740
UR  - https://doi.org/10.1002/smtd.70740
ER  -

APA

Xu, K., Sheng, C., Xia, D., Qiu, Z., Cong, C., Liu, R., & Hu, L. (2026). Solution‐Processed Submicron‐Channel Organic Ferroelectric Memristors with a Low Operation Voltage of 1 V. Small Methods. https://doi.org/10.1002/smtd.70740

Source records

crossref · retrieved 2026-09-25T06:13:19.066Z