Advances in Te/Se-Based 2D p-Type Semiconductors for Electronics and Optoelectronics.

Lv J, Ren D, Zhu L, Hu Y, Shao B, Liao C, Yang P, Liang Z, Ning CZ

DOI: 10.1002/smtd.70969
Published: 2026 Sep
Container: Small methods
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/smtd.70969,
  title = {Advances in Te/Se-Based 2D p-Type Semiconductors for Electronics and Optoelectronics.},
  author = {Lv J and Ren D and Zhu L and Hu Y and Shao B and Liao C and Yang P and Liang Z and Ning CZ},
  year = {2026},
  journal = {Small methods},
  doi = {10.1002/smtd.70969},
  url = {https://doi.org/10.1002/smtd.70969}
}

RIS

TY  - JOUR
TI  - Advances in Te/Se-Based 2D p-Type Semiconductors for Electronics and Optoelectronics.
AU  - Lv J
AU  - Ren D
AU  - Zhu L
AU  - Hu Y
AU  - Shao B
AU  - Liao C
AU  - Yang P
AU  - Liang Z
AU  - Ning CZ
PY  - 2026
JO  - Small methods
DO  - 10.1002/smtd.70969
UR  - https://doi.org/10.1002/smtd.70969
ER  -

APA

J, L., D, R., L, Z., Y, H., B, S., C, L., P, Y., Z, L., & CZ, N. (2026). Advances in Te/Se-Based 2D p-Type Semiconductors for Electronics and Optoelectronics.. Small methods. https://doi.org/10.1002/smtd.70969

Source records

pubmed · retrieved 2026-09-24T19:47:45.471Z