Hafnium-Based Ferroelectric Field-Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges.
- DOI
- 10.1002/tcr.202500353
- Published
- 2026 Jun
- Container
- Chemical record (New York, N.Y.)
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1002/tcr.202500353,
title = {Hafnium-Based Ferroelectric Field-Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges.},
author = {Su G and Zhang H and Li Z and Ning H and Luo D and He H and Zheng J and Chi Y and Yao R and Peng J},
year = {2026},
journal = {Chemical record (New York, N.Y.)},
doi = {10.1002/tcr.202500353},
url = {https://doi.org/10.1002/tcr.202500353}
}RIS
TY - JOUR TI - Hafnium-Based Ferroelectric Field-Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges. AU - Su G AU - Zhang H AU - Li Z AU - Ning H AU - Luo D AU - He H AU - Zheng J AU - Chi Y AU - Yao R AU - Peng J PY - 2026 JO - Chemical record (New York, N.Y.) DO - 10.1002/tcr.202500353 UR - https://doi.org/10.1002/tcr.202500353 ER -
APA
G, S., H, Z., Z, L., H, N., D, L., H, H., J, Z., Y, C., R, Y., & J, P. (2026). Hafnium-Based Ferroelectric Field-Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges.. Chemical record (New York, N.Y.). https://doi.org/10.1002/tcr.202500353
Source records
- pubmed · retrieved 2026-09-25T13:21:06.854Z