Hafnium‐Based Ferroelectric Field‐Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges

Guoping Su, Hongbin Zhang, Zhenchao Li, Honglong Ning, Dongxiang Luo, Han He, Jiahao Zheng, Yuan Chi, Rihui Yao, Junbiao Peng

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DOI: 10.1002/tcr.202500353
Published: 2026-04-09
Container: The Chemical Record
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1002/tcr.202500353,
  title = {Hafnium‐Based Ferroelectric Field‐Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges},
  author = {Guoping Su and Hongbin Zhang and Zhenchao Li and Honglong Ning and Dongxiang Luo and Han He and Jiahao Zheng and Yuan Chi and Rihui Yao and Junbiao Peng},
  year = {2026},
  journal = {The Chemical Record},
  doi = {10.1002/tcr.202500353},
  url = {https://doi.org/10.1002/tcr.202500353}
}

RIS

TY  - JOUR
TI  - Hafnium‐Based Ferroelectric Field‐Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges
AU  - Guoping Su
AU  - Hongbin Zhang
AU  - Zhenchao Li
AU  - Honglong Ning
AU  - Dongxiang Luo
AU  - Han He
AU  - Jiahao Zheng
AU  - Yuan Chi
AU  - Rihui Yao
AU  - Junbiao Peng
PY  - 2026
JO  - The Chemical Record
DO  - 10.1002/tcr.202500353
UR  - https://doi.org/10.1002/tcr.202500353
ER  -

APA

Su, G., Zhang, H., Li, Z., Ning, H., Luo, D., He, H., Zheng, J., Chi, Y., Yao, R., & Peng, J. (2026). Hafnium‐Based Ferroelectric Field‐Effect Transistors With Oxide Semiconductors: Ferroelectric Materials Optimizations, Prospects, and Challenges. The Chemical Record. https://doi.org/10.1002/tcr.202500353

Source records

crossref · retrieved 2026-11-06T01:41:06.601Z