TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
- DOI
- 10.1007/978-3-319-31165-4_52
- Published
- 2016
- Container
- IFIP Advances in Information and Communication Technology
- Publisher
- Springer International Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1007/978-3-319-31165-4_52,
title = {TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors},
author = {Jorge Martins and Pedro Barquinha and João Goes},
year = {2016},
journal = {IFIP Advances in Information and Communication Technology},
doi = {10.1007/978-3-319-31165-4_52},
url = {https://doi.org/10.1007/978-3-319-31165-4_52}
}RIS
TY - JOUR TI - TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors AU - Jorge Martins AU - Pedro Barquinha AU - João Goes PY - 2016 JO - IFIP Advances in Information and Communication Technology DO - 10.1007/978-3-319-31165-4_52 UR - https://doi.org/10.1007/978-3-319-31165-4_52 ER -
APA
Martins, J., Barquinha, P., & Goes, J. (2016). TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. IFIP Advances in Information and Communication Technology. https://doi.org/10.1007/978-3-319-31165-4_52
Source records
- crossref · retrieved 2026-11-10T14:40:08.010Z