Study of black silicon obtained by cryogenic plasma etching: approach to achieve the hot spot of a thermoelectric energy harvester
- DOI
- 10.1007/s00542-012-1486-0
- Published
- 2012-03-28
- Container
- Microsystem Technologies
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1007/s00542-012-1486-0,
title = {Study of black silicon obtained by cryogenic plasma etching: approach to achieve the hot spot of a thermoelectric energy harvester},
author = {K. N. Nguyen and D. Abi-Saab and P. Basset and E. Richalot and M. Malak and N. Pavy and F. Flourens and F. Marty and D. Angelescu and Y. Leprince-Wang and T. Bourouina},
year = {2012},
journal = {Microsystem Technologies},
doi = {10.1007/s00542-012-1486-0},
url = {https://doi.org/10.1007/s00542-012-1486-0}
}RIS
TY - JOUR TI - Study of black silicon obtained by cryogenic plasma etching: approach to achieve the hot spot of a thermoelectric energy harvester AU - K. N. Nguyen AU - D. Abi-Saab AU - P. Basset AU - E. Richalot AU - M. Malak AU - N. Pavy AU - F. Flourens AU - F. Marty AU - D. Angelescu AU - Y. Leprince-Wang AU - T. Bourouina PY - 2012 JO - Microsystem Technologies DO - 10.1007/s00542-012-1486-0 UR - https://doi.org/10.1007/s00542-012-1486-0 ER -
APA
Nguyen, K. N., Abi-Saab, D., Basset, P., Richalot, E., Malak, M., Pavy, N., Flourens, F., Marty, F., Angelescu, D., Leprince-Wang, Y., & Bourouina, T. (2012). Study of black silicon obtained by cryogenic plasma etching: approach to achieve the hot spot of a thermoelectric energy harvester. Microsystem Technologies. https://doi.org/10.1007/s00542-012-1486-0
Source records
- crossref · retrieved 2026-09-25T10:27:32.720Z