Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors

Mongia Mhiri, Aymen Ben Hammadi, Fayrouz Haddad, Sehmi Saad, Kamel Besbes

Open source

DOI: 10.1007/s12668-017-0483-2
Published: 2017-12-12
Container: BioNanoScience
Publisher: Springer Science and Business Media LLC
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1007/s12668-017-0483-2,
  title = {Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors},
  author = {Mongia Mhiri and Aymen Ben Hammadi and Fayrouz Haddad and Sehmi Saad and Kamel Besbes},
  year = {2017},
  journal = {BioNanoScience},
  doi = {10.1007/s12668-017-0483-2},
  url = {https://doi.org/10.1007/s12668-017-0483-2}
}

RIS

TY  - JOUR
TI  - Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors
AU  - Mongia Mhiri
AU  - Aymen Ben Hammadi
AU  - Fayrouz Haddad
AU  - Sehmi Saad
AU  - Kamel Besbes
PY  - 2017
JO  - BioNanoScience
DO  - 10.1007/s12668-017-0483-2
UR  - https://doi.org/10.1007/s12668-017-0483-2
ER  -

APA

Mhiri, M., Hammadi, A. B., Haddad, F., Saad, S., & Besbes, K. (2017). Power and Noise Optimization Techniques of RF Active Inductor Using Multi-Finger Gate Transistors. BioNanoScience. https://doi.org/10.1007/s12668-017-0483-2

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crossref · retrieved 2026-09-25T11:31:03.757Z