Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation
- DOI
- 10.1007/s40820-026-02158-z
- Published
- 2026-04-13
- Container
- Nano-Micro Letters
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1007/s40820-026-02158-z,
title = {Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation},
author = {Xiangwei Chen and Zheng Wang and Jialin Meng and Tianyu Wang},
year = {2026},
journal = {Nano-Micro Letters},
doi = {10.1007/s40820-026-02158-z},
url = {https://doi.org/10.1007/s40820-026-02158-z}
}RIS
TY - JOUR TI - Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation AU - Xiangwei Chen AU - Zheng Wang AU - Jialin Meng AU - Tianyu Wang PY - 2026 JO - Nano-Micro Letters DO - 10.1007/s40820-026-02158-z UR - https://doi.org/10.1007/s40820-026-02158-z ER -
APA
Chen, X., Wang, Z., Meng, J., & Wang, T. (2026). Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation. Nano-Micro Letters. https://doi.org/10.1007/s40820-026-02158-z
Source records
- crossref · retrieved 2026-09-26T15:23:57.109Z