Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon
- DOI
- 10.1016/0009-2614(86)80297-4
- Published
- 1986-06
- Container
- Chemical Physics Letters
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0009-2614-86-80297-4,
title = {Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon},
author = {Edgar W. Ignacio and H.Bernhard Schlegel and Jozef Bicerano},
year = {1986},
journal = {Chemical Physics Letters},
doi = {10.1016/0009-2614(86)80297-4},
url = {https://doi.org/10.1016/0009-2614(86)80297-4}
}RIS
TY - JOUR TI - Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon AU - Edgar W. Ignacio AU - H.Bernhard Schlegel AU - Jozef Bicerano PY - 1986 JO - Chemical Physics Letters DO - 10.1016/0009-2614(86)80297-4 UR - https://doi.org/10.1016/0009-2614(86)80297-4 ER -
APA
Ignacio, E. W., Schlegel, H., & Bicerano, J. (1986). Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon. Chemical Physics Letters. https://doi.org/10.1016/0009-2614(86)80297-4
Source records
- crossref · retrieved 2026-09-26T06:09:56.499Z