The first field effect transistor based on an intrinsic molecular semiconductor
- DOI
- 10.1016/0009-2614(87)87259-7
- Published
- 1987-12
- Container
- Chemical Physics Letters
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0009-2614-87-87259-7,
title = {The first field effect transistor based on an intrinsic molecular semiconductor},
author = {M. Madru and G. Guillaud and M.Al Sadoun and M. Maitrot and C. Clarisse and M.Le Contellec and J.-J. André and J. Simon},
year = {1987},
journal = {Chemical Physics Letters},
doi = {10.1016/0009-2614(87)87259-7},
url = {https://doi.org/10.1016/0009-2614(87)87259-7}
}RIS
TY - JOUR TI - The first field effect transistor based on an intrinsic molecular semiconductor AU - M. Madru AU - G. Guillaud AU - M.Al Sadoun AU - M. Maitrot AU - C. Clarisse AU - M.Le Contellec AU - J.-J. André AU - J. Simon PY - 1987 JO - Chemical Physics Letters DO - 10.1016/0009-2614(87)87259-7 UR - https://doi.org/10.1016/0009-2614(87)87259-7 ER -
APA
Madru, M., Guillaud, G., Sadoun, M., Maitrot, M., Clarisse, C., Contellec, M., André, J., & Simon, J. (1987). The first field effect transistor based on an intrinsic molecular semiconductor. Chemical Physics Letters. https://doi.org/10.1016/0009-2614(87)87259-7
Source records
- crossref · retrieved 2026-09-26T12:59:43.370Z