Low temperature adsorption and reaction of NO on GaAs(110)

Klaus Kern, Yves Chabal, Gregg Higashi, Andreas Vom Felde, Mark Cardillo

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DOI: 10.1016/0009-2614(90)85130-5
Published: 1990-04
Container: Chemical Physics Letters
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/0009-2614-90-85130-5,
  title = {Low temperature adsorption and reaction of NO on GaAs(110)},
  author = {Klaus Kern and Yves Chabal and Gregg Higashi and Andreas Vom Felde and Mark Cardillo},
  year = {1990},
  journal = {Chemical Physics Letters},
  doi = {10.1016/0009-2614(90)85130-5},
  url = {https://doi.org/10.1016/0009-2614(90)85130-5}
}

RIS

TY  - JOUR
TI  - Low temperature adsorption and reaction of NO on GaAs(110)
AU  - Klaus Kern
AU  - Yves Chabal
AU  - Gregg Higashi
AU  - Andreas Vom Felde
AU  - Mark Cardillo
PY  - 1990
JO  - Chemical Physics Letters
DO  - 10.1016/0009-2614(90)85130-5
UR  - https://doi.org/10.1016/0009-2614(90)85130-5
ER  -

APA

Kern, K., Chabal, Y., Higashi, G., Felde, A. V., & Cardillo, M. (1990). Low temperature adsorption and reaction of NO on GaAs(110). Chemical Physics Letters. https://doi.org/10.1016/0009-2614(90)85130-5

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crossref · retrieved 2026-09-26T05:17:47.268Z