Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction
- DOI
- 10.1016/0013-4686(94)e0174-x
- Published
- 1994-10
- Container
- Electrochimica Acta
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0013-4686-94-e0174-x,
title = {Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction},
author = {Carlos da Fonseca and Mário Guerreiro Ferreira and Manuel da Cunha Belo},
year = {1994},
journal = {Electrochimica Acta},
doi = {10.1016/0013-4686(94)e0174-x},
url = {https://doi.org/10.1016/0013-4686(94)e0174-x}
}RIS
TY - JOUR TI - Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction AU - Carlos da Fonseca AU - Mário Guerreiro Ferreira AU - Manuel da Cunha Belo PY - 1994 JO - Electrochimica Acta DO - 10.1016/0013-4686(94)e0174-x UR - https://doi.org/10.1016/0013-4686(94)e0174-x ER -
APA
Fonseca, C. D., Ferreira, M. G., & Belo, M. D. C. (1994). Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction. Electrochimica Acta. https://doi.org/10.1016/0013-4686(94)e0174-x
Source records
- crossref · retrieved 2026-09-26T12:33:15.332Z