Influence of surface relaxation on the electronic states of the α-Al2O3 (0001) surface: a self-consistent tight-binding approach

M. Gautier-Soyer, F. Jollet, C. Noguera

Open source

DOI: 10.1016/0039-6028(95)01242-7
Published: 1996-05
Container: Surface Science
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/0039-6028-95-01242-7,
  title = {Influence of surface relaxation on the electronic states of the α-Al2O3 (0001) surface: a self-consistent tight-binding approach},
  author = {M. Gautier-Soyer and F. Jollet and C. Noguera},
  year = {1996},
  journal = {Surface Science},
  doi = {10.1016/0039-6028(95)01242-7},
  url = {https://doi.org/10.1016/0039-6028(95)01242-7}
}

RIS

TY  - JOUR
TI  - Influence of surface relaxation on the electronic states of the α-Al2O3 (0001) surface: a self-consistent tight-binding approach
AU  - M. Gautier-Soyer
AU  - F. Jollet
AU  - C. Noguera
PY  - 1996
JO  - Surface Science
DO  - 10.1016/0039-6028(95)01242-7
UR  - https://doi.org/10.1016/0039-6028(95)01242-7
ER  -

APA

Gautier-Soyer, M., Jollet, F., & Noguera, C. (1996). Influence of surface relaxation on the electronic states of the α-Al2O3 (0001) surface: a self-consistent tight-binding approach. Surface Science. https://doi.org/10.1016/0039-6028(95)01242-7

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crossref · retrieved 2026-11-08T19:57:04.464Z