I-Line to DUV transition for critical levels

John J. Shamaly, Victor F. Bunze

Open source

DOI: 10.1016/0167-9317(95)00201-4
Published: 1996-01
Container: Microelectronic Engineering
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/0167-9317-95-00201-4,
  title = {I-Line to DUV transition for critical levels},
  author = {John J. Shamaly and Victor F. Bunze},
  year = {1996},
  journal = {Microelectronic Engineering},
  doi = {10.1016/0167-9317(95)00201-4},
  url = {https://doi.org/10.1016/0167-9317(95)00201-4}
}

RIS

TY  - JOUR
TI  - I-Line to DUV transition for critical levels
AU  - John J. Shamaly
AU  - Victor F. Bunze
PY  - 1996
JO  - Microelectronic Engineering
DO  - 10.1016/0167-9317(95)00201-4
UR  - https://doi.org/10.1016/0167-9317(95)00201-4
ER  -

APA

Shamaly, J. J., & Bunze, V. F. (1996). I-Line to DUV transition for critical levels. Microelectronic Engineering. https://doi.org/10.1016/0167-9317(95)00201-4

Source records

crossref · retrieved 2026-09-25T21:28:55.168Z