High temperature ion implantation of silicon carbide
- DOI
- 10.1016/0168-583x(94)00513-3
- Published
- 1995-03
- Container
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0168-583x-94-00513-3,
title = {High temperature ion implantation of silicon carbide},
author = {W. Wesch and A. Heft and E. Wendler and T. Bachmann and E. Glaser},
year = {1995},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
doi = {10.1016/0168-583x(94)00513-3},
url = {https://doi.org/10.1016/0168-583x(94)00513-3}
}RIS
TY - JOUR TI - High temperature ion implantation of silicon carbide AU - W. Wesch AU - A. Heft AU - E. Wendler AU - T. Bachmann AU - E. Glaser PY - 1995 JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DO - 10.1016/0168-583x(94)00513-3 UR - https://doi.org/10.1016/0168-583x(94)00513-3 ER -
APA
Wesch, W., Heft, A., Wendler, E., Bachmann, T., & Glaser, E. (1995). High temperature ion implantation of silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. https://doi.org/10.1016/0168-583x(94)00513-3
Source records
- crossref · retrieved 2026-09-26T04:23:59.375Z