The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask
- DOI
- 10.1016/0168-583x(95)01424-1
- Published
- 1996-05
- Container
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Publisher
- Elsevier BV
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1016/0168-583x-95-01424-1,
title = {The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask},
author = {L. Kaabi and B. Remaki and C. Gontrand and P.F. Lo and B. Balland},
year = {1996},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
doi = {10.1016/0168-583x(95)01424-1},
url = {https://doi.org/10.1016/0168-583x(95)01424-1}
}RIS
TY - JOUR TI - The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask AU - L. Kaabi AU - B. Remaki AU - C. Gontrand AU - P.F. Lo AU - B. Balland PY - 1996 JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DO - 10.1016/0168-583x(95)01424-1 UR - https://doi.org/10.1016/0168-583x(95)01424-1 ER -
APA
Kaabi, L., Remaki, B., Gontrand, C., Lo, P., & Balland, B. (1996). The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. https://doi.org/10.1016/0168-583x(95)01424-1
Source records
- crossref · retrieved 2026-09-26T20:23:30.320Z