Investigation of radiation damage in ion implanted and annealed SiC layers
- DOI
- 10.1016/0168-583x(96)80027-9
- Published
- 1995-12
- Container
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0168-583x-96-80027-9,
title = {Investigation of radiation damage in ion implanted and annealed SiC layers},
author = {W. Wesch and A. Heft and J. Heindl and H.P. Strunk and T. Bachmann and E. Glaser and E. Wendler},
year = {1995},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
doi = {10.1016/0168-583x(96)80027-9},
url = {https://doi.org/10.1016/0168-583x(96)80027-9}
}RIS
TY - JOUR TI - Investigation of radiation damage in ion implanted and annealed SiC layers AU - W. Wesch AU - A. Heft AU - J. Heindl AU - H.P. Strunk AU - T. Bachmann AU - E. Glaser AU - E. Wendler PY - 1995 JO - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DO - 10.1016/0168-583x(96)80027-9 UR - https://doi.org/10.1016/0168-583x(96)80027-9 ER -
APA
Wesch, W., Heft, A., Heindl, J., Strunk, H., Bachmann, T., Glaser, E., & Wendler, E. (1995). Investigation of radiation damage in ion implanted and annealed SiC layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. https://doi.org/10.1016/0168-583x(96)80027-9
Source records
- crossref · retrieved 2026-09-26T03:29:05.283Z