Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices

G.D. Sharma, S.G. Sangodkar, M.S. Roy

Open source

DOI: 10.1016/0379-6779(96)80009-9
Published: 1995-12
Container: Synthetic Metals
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/0379-6779-96-80009-9,
  title = {Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices},
  author = {G.D. Sharma and S.G. Sangodkar and M.S. Roy},
  year = {1995},
  journal = {Synthetic Metals},
  doi = {10.1016/0379-6779(96)80009-9},
  url = {https://doi.org/10.1016/0379-6779(96)80009-9}
}

RIS

TY  - JOUR
TI  - Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices
AU  - G.D. Sharma
AU  - S.G. Sangodkar
AU  - M.S. Roy
PY  - 1995
JO  - Synthetic Metals
DO  - 10.1016/0379-6779(96)80009-9
UR  - https://doi.org/10.1016/0379-6779(96)80009-9
ER  -

APA

Sharma, G., Sangodkar, S., & Roy, M. (1995). Study on electrical and photoelectrical behaviour of undoped and doped furazano[3,4-b]piperazine (FP) thin-film devices. Synthetic Metals. https://doi.org/10.1016/0379-6779(96)80009-9

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crossref · retrieved 2026-09-26T22:10:17.746Z