‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors
- DOI
- 10.1016/0924-4247(90)87077-v
- Published
- 1990-04
- Container
- Sensors and Actuators A: Physical
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/0924-4247-90-87077-v,
title = {‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors},
author = {B. Diem and R. Truche and S. Viollet-Bosson and G. Delapierre},
year = {1990},
journal = {Sensors and Actuators A: Physical},
doi = {10.1016/0924-4247(90)87077-v},
url = {https://doi.org/10.1016/0924-4247(90)87077-v}
}RIS
TY - JOUR TI - ‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors AU - B. Diem AU - R. Truche AU - S. Viollet-Bosson AU - G. Delapierre PY - 1990 JO - Sensors and Actuators A: Physical DO - 10.1016/0924-4247(90)87077-v UR - https://doi.org/10.1016/0924-4247(90)87077-v ER -
APA
Diem, B., Truche, R., Viollet-Bosson, S., & Delapierre, G. (1990). ‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors. Sensors and Actuators A: Physical. https://doi.org/10.1016/0924-4247(90)87077-v
Source records
- crossref · retrieved 2026-09-25T22:56:15.749Z