New suspended gate FET technology for physical deposition of chemically sensitive layers

H. Lorenz, M. Peschke, H. Riess, J. Janata, I. Eisele

Open source

DOI: 10.1016/0924-4247(90)87082-t
Published: 1990-04
Container: Sensors and Actuators A: Physical
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/0924-4247-90-87082-t,
  title = {New suspended gate FET technology for physical deposition of chemically sensitive layers},
  author = {H. Lorenz and M. Peschke and H. Riess and J. Janata and I. Eisele},
  year = {1990},
  journal = {Sensors and Actuators A: Physical},
  doi = {10.1016/0924-4247(90)87082-t},
  url = {https://doi.org/10.1016/0924-4247(90)87082-t}
}

RIS

TY  - JOUR
TI  - New suspended gate FET technology for physical deposition of chemically sensitive layers
AU  - H. Lorenz
AU  - M. Peschke
AU  - H. Riess
AU  - J. Janata
AU  - I. Eisele
PY  - 1990
JO  - Sensors and Actuators A: Physical
DO  - 10.1016/0924-4247(90)87082-t
UR  - https://doi.org/10.1016/0924-4247(90)87082-t
ER  -

APA

Lorenz, H., Peschke, M., Riess, H., Janata, J., & Eisele, I. (1990). New suspended gate FET technology for physical deposition of chemically sensitive layers. Sensors and Actuators A: Physical. https://doi.org/10.1016/0924-4247(90)87082-t

Source records

crossref · retrieved 2026-09-26T11:02:52.135Z