Mitigating electrical degradation in ultra-thin IGZO TFTs through contact engineering with Al2O3 interlayer

JinKyu Lee, Sunyeol Bae, Seungyoon Shin, Soo-Yeon Lee

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DOI: 10.1016/j.apsadv.2025.100827
Published: 2025-09
Container: Applied Surface Science Advances
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/j.apsadv.2025.100827,
  title = {Mitigating electrical degradation in ultra-thin IGZO TFTs through contact engineering with Al2O3 interlayer},
  author = {JinKyu Lee and Sunyeol Bae and Seungyoon Shin and Soo-Yeon Lee},
  year = {2025},
  journal = {Applied Surface Science Advances},
  doi = {10.1016/j.apsadv.2025.100827},
  url = {https://doi.org/10.1016/j.apsadv.2025.100827}
}

RIS

TY  - JOUR
TI  - Mitigating electrical degradation in ultra-thin IGZO TFTs through contact engineering with Al2O3 interlayer
AU  - JinKyu Lee
AU  - Sunyeol Bae
AU  - Seungyoon Shin
AU  - Soo-Yeon Lee
PY  - 2025
JO  - Applied Surface Science Advances
DO  - 10.1016/j.apsadv.2025.100827
UR  - https://doi.org/10.1016/j.apsadv.2025.100827
ER  -

APA

Lee, J., Bae, S., Shin, S., & Lee, S. (2025). Mitigating electrical degradation in ultra-thin IGZO TFTs through contact engineering with Al2O3 interlayer. Applied Surface Science Advances. https://doi.org/10.1016/j.apsadv.2025.100827

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crossref · retrieved 2026-11-10T14:31:26.901Z