Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core
- DOI
- 10.1016/j.apsusc.2003.08.108
- Published
- 2004-03
- Container
- Applied Surface Science
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.apsusc.2003.08.108,
title = {Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core},
author = {Yudi Darma and Hideki Murakami and Seiichi Miyazaki},
year = {2004},
journal = {Applied Surface Science},
doi = {10.1016/j.apsusc.2003.08.108},
url = {https://doi.org/10.1016/j.apsusc.2003.08.108}
}RIS
TY - JOUR TI - Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core AU - Yudi Darma AU - Hideki Murakami AU - Seiichi Miyazaki PY - 2004 JO - Applied Surface Science DO - 10.1016/j.apsusc.2003.08.108 UR - https://doi.org/10.1016/j.apsusc.2003.08.108 ER -
APA
Darma, Y., Murakami, H., & Miyazaki, S. (2004). Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core. Applied Surface Science. https://doi.org/10.1016/j.apsusc.2003.08.108
Source records
- crossref · retrieved 2026-09-27T05:20:19.919Z