Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core

Yudi Darma, Hideki Murakami, Seiichi Miyazaki

Open source

DOI
10.1016/j.apsusc.2003.08.108
Published
2004-03
Container
Applied Surface Science
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/j.apsusc.2003.08.108,
  title = {Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core},
  author = {Yudi Darma and Hideki Murakami and Seiichi Miyazaki},
  year = {2004},
  journal = {Applied Surface Science},
  doi = {10.1016/j.apsusc.2003.08.108},
  url = {https://doi.org/10.1016/j.apsusc.2003.08.108}
}

RIS

TY  - JOUR
TI  - Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core
AU  - Yudi Darma
AU  - Hideki Murakami
AU  - Seiichi Miyazaki
PY  - 2004
JO  - Applied Surface Science
DO  - 10.1016/j.apsusc.2003.08.108
UR  - https://doi.org/10.1016/j.apsusc.2003.08.108
ER  - 

APA

Darma, Y., Murakami, H., & Miyazaki, S. (2004). Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core. Applied Surface Science. https://doi.org/10.1016/j.apsusc.2003.08.108

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