HfO<sub>2</sub>-based ferroelectric thin film and memory device applications in the post-Moore era: A review.
- DOI
- 10.1016/j.fmre.2023.02.010
- Published
- 2023-03-02
- Container
- Fundam Res
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1016/j.fmre.2023.02.010,
title = {HfO<sub>2</sub>-based ferroelectric thin film and memory device applications in the post-Moore era: A review.},
author = {Liao J and Dai S and Peng RC and Yang J and Zeng B and Liao M and Zhou Y.},
year = {2023},
journal = {Fundam Res},
doi = {10.1016/j.fmre.2023.02.010},
url = {https://doi.org/10.1016/j.fmre.2023.02.010}
}RIS
TY - JOUR TI - HfO<sub>2</sub>-based ferroelectric thin film and memory device applications in the post-Moore era: A review. AU - Liao J AU - Dai S AU - Peng RC AU - Yang J AU - Zeng B AU - Liao M AU - Zhou Y. PY - 2023 JO - Fundam Res DO - 10.1016/j.fmre.2023.02.010 UR - https://doi.org/10.1016/j.fmre.2023.02.010 ER -
APA
J, L., S, D., RC, P., J, Y., B, Z., M, L., & Y., Z. (2023). HfO<sub>2</sub>-based ferroelectric thin film and memory device applications in the post-Moore era: A review.. Fundam Res. https://doi.org/10.1016/j.fmre.2023.02.010
Source records
- europe-pmc · retrieved 2026-09-26T21:47:16.966Z