GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function.

Hasan N, Islam MR, Hasan MT

DOI: 10.1016/j.heliyon.2024.e31834
Published: 2024 Jun 15
Container: Heliyon
Publisher: Not recorded
Open access: yes

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BibTeX

@article{allodium:10.1016/j.heliyon.2024.e31834,
  title = {GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function.},
  author = {Hasan N and Islam MR and Hasan MT},
  year = {2024},
  journal = {Heliyon},
  doi = {10.1016/j.heliyon.2024.e31834},
  url = {https://doi.org/10.1016/j.heliyon.2024.e31834}
}

RIS

TY  - JOUR
TI  - GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function.
AU  - Hasan N
AU  - Islam MR
AU  - Hasan MT
PY  - 2024
JO  - Heliyon
DO  - 10.1016/j.heliyon.2024.e31834
UR  - https://doi.org/10.1016/j.heliyon.2024.e31834
ER  -

APA

N, H., MR, I., & MT, H. (2024). GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function.. Heliyon. https://doi.org/10.1016/j.heliyon.2024.e31834

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pubmed · retrieved 2026-09-26T17:17:31.060Z