Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application

Hui Dong, Junzheng Mu, Jinfeng Peng, Xuejun Zheng, Liang Chu

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DOI: 10.1016/j.isci.2024.110819
Published: 2024-10
Container: iScience
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/j.isci.2024.110819,
  title = {Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application},
  author = {Hui Dong and Junzheng Mu and Jinfeng Peng and Xuejun Zheng and Liang Chu},
  year = {2024},
  journal = {iScience},
  doi = {10.1016/j.isci.2024.110819},
  url = {https://doi.org/10.1016/j.isci.2024.110819}
}

RIS

TY  - JOUR
TI  - Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application
AU  - Hui Dong
AU  - Junzheng Mu
AU  - Jinfeng Peng
AU  - Xuejun Zheng
AU  - Liang Chu
PY  - 2024
JO  - iScience
DO  - 10.1016/j.isci.2024.110819
UR  - https://doi.org/10.1016/j.isci.2024.110819
ER  -

APA

Dong, H., Mu, J., Peng, J., Zheng, X., & Chu, L. (2024). Mechanism of local electric oxidation on two-dimensional MoS2 for resistive memory application. iScience. https://doi.org/10.1016/j.isci.2024.110819

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crossref · retrieved 2026-09-26T12:54:49.071Z