S-O dual vacancy stoichiometry engineering of interfacial BIEF in Co(9)S(8)-MoO(2) heterojunctions for OER.

Ren S, Jing B, Qiu S, Deng F, Cui C

DOI: 10.1016/j.jcis.2026.140928
Published: 2026 Dec
Container: Journal of colloid and interface science
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/j.jcis.2026.140928,
  title = {S-O dual vacancy stoichiometry engineering of interfacial BIEF in Co(9)S(8)-MoO(2) heterojunctions for OER.},
  author = {Ren S and Jing B and Qiu S and Deng F and Cui C},
  year = {2026},
  journal = {Journal of colloid and interface science},
  doi = {10.1016/j.jcis.2026.140928},
  url = {https://doi.org/10.1016/j.jcis.2026.140928}
}

RIS

TY  - JOUR
TI  - S-O dual vacancy stoichiometry engineering of interfacial BIEF in Co(9)S(8)-MoO(2) heterojunctions for OER.
AU  - Ren S
AU  - Jing B
AU  - Qiu S
AU  - Deng F
AU  - Cui C
PY  - 2026
JO  - Journal of colloid and interface science
DO  - 10.1016/j.jcis.2026.140928
UR  - https://doi.org/10.1016/j.jcis.2026.140928
ER  -

APA

S, R., B, J., S, Q., F, D., & C, C. (2026). S-O dual vacancy stoichiometry engineering of interfacial BIEF in Co(9)S(8)-MoO(2) heterojunctions for OER.. Journal of colloid and interface science. https://doi.org/10.1016/j.jcis.2026.140928

Source records

pubmed · retrieved 2026-09-26T03:24:52.420Z