Ag(+)-driven valence band engineering and defect suppression enable a record 0.75 V open-circuit voltage in low-temperature, all-inorganic CuInS(2) solar cells.
- DOI
- 10.1016/j.jcis.2026.141398
- Published
- 2026 Aug 19
- Container
- Journal of colloid and interface science
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.jcis.2026.141398,
title = {Ag(+)-driven valence band engineering and defect suppression enable a record 0.75 V open-circuit voltage in low-temperature, all-inorganic CuInS(2) solar cells.},
author = {Kuang J and Cao W and Zheng C and Wang Y and Zhu L and Naveed F and Chen J and Wang M},
year = {2026},
journal = {Journal of colloid and interface science},
doi = {10.1016/j.jcis.2026.141398},
url = {https://doi.org/10.1016/j.jcis.2026.141398}
}RIS
TY - JOUR TI - Ag(+)-driven valence band engineering and defect suppression enable a record 0.75 V open-circuit voltage in low-temperature, all-inorganic CuInS(2) solar cells. AU - Kuang J AU - Cao W AU - Zheng C AU - Wang Y AU - Zhu L AU - Naveed F AU - Chen J AU - Wang M PY - 2026 JO - Journal of colloid and interface science DO - 10.1016/j.jcis.2026.141398 UR - https://doi.org/10.1016/j.jcis.2026.141398 ER -
APA
J, K., W, C., C, Z., Y, W., L, Z., F, N., J, C., & M, W. (2026). Ag(+)-driven valence band engineering and defect suppression enable a record 0.75 V open-circuit voltage in low-temperature, all-inorganic CuInS(2) solar cells.. Journal of colloid and interface science. https://doi.org/10.1016/j.jcis.2026.141398
Source records
- pubmed · retrieved 2026-09-25T11:58:58.917Z