High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

C. Barreteau, B. Michon, C. Besnard, E. Giannini

Open source

DOI: 10.1016/j.jcrysgro.2016.03.019
Published: 2016-06
Container: Journal of Crystal Growth
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/j.jcrysgro.2016.03.019,
  title = {High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors},
  author = {C. Barreteau and B. Michon and C. Besnard and E. Giannini},
  year = {2016},
  journal = {Journal of Crystal Growth},
  doi = {10.1016/j.jcrysgro.2016.03.019},
  url = {https://doi.org/10.1016/j.jcrysgro.2016.03.019}
}

RIS

TY  - JOUR
TI  - High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors
AU  - C. Barreteau
AU  - B. Michon
AU  - C. Besnard
AU  - E. Giannini
PY  - 2016
JO  - Journal of Crystal Growth
DO  - 10.1016/j.jcrysgro.2016.03.019
UR  - https://doi.org/10.1016/j.jcrysgro.2016.03.019
ER  -

APA

Barreteau, C., Michon, B., Besnard, C., & Giannini, E. (2016). High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors. Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2016.03.019

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crossref · retrieved 2026-09-25T19:06:33.822Z