The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method

Fayyaz Hussain, Aqsa Arooj, Muhammad Imran, Ammar Mohamed Tighezza, Umbreen Rasheed, R.M.Arif Khalil, Muhammad Fahad Ehsan

Open source

DOI
10.1016/j.jmgm.2025.109000
Published
2025-06
Container
Journal of Molecular Graphics and Modelling
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/j.jmgm.2025.109000,
  title = {The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method},
  author = {Fayyaz Hussain and Aqsa Arooj and Muhammad Imran and Ammar Mohamed Tighezza and Umbreen Rasheed and R.M.Arif Khalil and Muhammad Fahad Ehsan},
  year = {2025},
  journal = {Journal of Molecular Graphics and Modelling},
  doi = {10.1016/j.jmgm.2025.109000},
  url = {https://doi.org/10.1016/j.jmgm.2025.109000}
}

RIS

TY  - JOUR
TI  - The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method
AU  - Fayyaz Hussain
AU  - Aqsa Arooj
AU  - Muhammad Imran
AU  - Ammar Mohamed Tighezza
AU  - Umbreen Rasheed
AU  - R.M.Arif Khalil
AU  - Muhammad Fahad Ehsan
PY  - 2025
JO  - Journal of Molecular Graphics and Modelling
DO  - 10.1016/j.jmgm.2025.109000
UR  - https://doi.org/10.1016/j.jmgm.2025.109000
ER  - 

APA

Hussain, F., Arooj, A., Imran, M., Tighezza, A. M., Rasheed, U., Khalil, R., & Ehsan, M. F. (2025). The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method. Journal of Molecular Graphics and Modelling. https://doi.org/10.1016/j.jmgm.2025.109000

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