Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
- DOI
- 10.1016/j.jmrt.2019.09.026
- Published
- 2019-11
- Container
- Journal of Materials Research and Technology
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.jmrt.2019.09.026,
title = {Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD},
author = {José Herrera-Celis and Claudia Reyes-Betanzo and Oscar Gelvez-Lizarazo and L.G. Arriaga and Adrián Itzmoyotl-Toxqui},
year = {2019},
journal = {Journal of Materials Research and Technology},
doi = {10.1016/j.jmrt.2019.09.026},
url = {https://doi.org/10.1016/j.jmrt.2019.09.026}
}RIS
TY - JOUR TI - Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD AU - José Herrera-Celis AU - Claudia Reyes-Betanzo AU - Oscar Gelvez-Lizarazo AU - L.G. Arriaga AU - Adrián Itzmoyotl-Toxqui PY - 2019 JO - Journal of Materials Research and Technology DO - 10.1016/j.jmrt.2019.09.026 UR - https://doi.org/10.1016/j.jmrt.2019.09.026 ER -
APA
Herrera-Celis, J., Reyes-Betanzo, C., Gelvez-Lizarazo, O., Arriaga, L., & Itzmoyotl-Toxqui, A. (2019). Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD. Journal of Materials Research and Technology. https://doi.org/10.1016/j.jmrt.2019.09.026
Source records
- crossref · retrieved 2026-09-27T13:59:34.321Z