Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

José Herrera-Celis, Claudia Reyes-Betanzo, Oscar Gelvez-Lizarazo, L.G. Arriaga, Adrián Itzmoyotl-Toxqui

Open source

DOI
10.1016/j.jmrt.2019.09.026
Published
2019-11
Container
Journal of Materials Research and Technology
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/j.jmrt.2019.09.026,
  title = {Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD},
  author = {José Herrera-Celis and Claudia Reyes-Betanzo and Oscar Gelvez-Lizarazo and L.G. Arriaga and Adrián Itzmoyotl-Toxqui},
  year = {2019},
  journal = {Journal of Materials Research and Technology},
  doi = {10.1016/j.jmrt.2019.09.026},
  url = {https://doi.org/10.1016/j.jmrt.2019.09.026}
}

RIS

TY  - JOUR
TI  - Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD
AU  - José Herrera-Celis
AU  - Claudia Reyes-Betanzo
AU  - Oscar Gelvez-Lizarazo
AU  - L.G. Arriaga
AU  - Adrián Itzmoyotl-Toxqui
PY  - 2019
JO  - Journal of Materials Research and Technology
DO  - 10.1016/j.jmrt.2019.09.026
UR  - https://doi.org/10.1016/j.jmrt.2019.09.026
ER  - 

APA

Herrera-Celis, J., Reyes-Betanzo, C., Gelvez-Lizarazo, O., Arriaga, L., & Itzmoyotl-Toxqui, A. (2019). Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD. Journal of Materials Research and Technology. https://doi.org/10.1016/j.jmrt.2019.09.026

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