Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance
- DOI
- 10.1016/j.jsamd.2024.100722
- Published
- 2024-06
- Container
- Journal of Science: Advanced Materials and Devices
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.jsamd.2024.100722,
title = {Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance},
author = {Ming-Jie Zhao and Yao-Tian Wang and Jia-Hao Yan and Hai-Cheng Li and Hua Xu and Dong-Sing Wuu and Wan-Yu Wu and Feng-Min Lai and Shui-Yang Lien and Wen-Zhang Zhu},
year = {2024},
journal = {Journal of Science: Advanced Materials and Devices},
doi = {10.1016/j.jsamd.2024.100722},
url = {https://doi.org/10.1016/j.jsamd.2024.100722}
}RIS
TY - JOUR TI - Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance AU - Ming-Jie Zhao AU - Yao-Tian Wang AU - Jia-Hao Yan AU - Hai-Cheng Li AU - Hua Xu AU - Dong-Sing Wuu AU - Wan-Yu Wu AU - Feng-Min Lai AU - Shui-Yang Lien AU - Wen-Zhang Zhu PY - 2024 JO - Journal of Science: Advanced Materials and Devices DO - 10.1016/j.jsamd.2024.100722 UR - https://doi.org/10.1016/j.jsamd.2024.100722 ER -
APA
Zhao, M., Wang, Y., Yan, J., Li, H., Xu, H., Wuu, D., Wu, W., Lai, F., Lien, S., & Zhu, W. (2024). Dielectric properties of hafnium oxide film prepared by HiPIMS at different O2/Ar ratios and their influences on TFT performance. Journal of Science: Advanced Materials and Devices. https://doi.org/10.1016/j.jsamd.2024.100722
Source records
- crossref · retrieved 2026-09-25T15:26:40.758Z