A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films

S. Guillemin, L. Lachal, P. Gergaud, A. Grenier, F. Nemouchi, F. Mazen, Ph. Rodriguez

Open source

DOI
10.1016/j.mee.2024.112210
Published
2024-08
Container
Microelectronic Engineering
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1016/j.mee.2024.112210,
  title = {A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films},
  author = {S. Guillemin and L. Lachal and P. Gergaud and A. Grenier and F. Nemouchi and F. Mazen and Ph. Rodriguez},
  year = {2024},
  journal = {Microelectronic Engineering},
  doi = {10.1016/j.mee.2024.112210},
  url = {https://doi.org/10.1016/j.mee.2024.112210}
}

RIS

TY  - JOUR
TI  - A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films
AU  - S. Guillemin
AU  - L. Lachal
AU  - P. Gergaud
AU  - A. Grenier
AU  - F. Nemouchi
AU  - F. Mazen
AU  - Ph. Rodriguez
PY  - 2024
JO  - Microelectronic Engineering
DO  - 10.1016/j.mee.2024.112210
UR  - https://doi.org/10.1016/j.mee.2024.112210
ER  - 

APA

Guillemin, S., Lachal, L., Gergaud, P., Grenier, A., Nemouchi, F., Mazen, F., & Rodriguez, P. (2024). A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films. Microelectronic Engineering. https://doi.org/10.1016/j.mee.2024.112210

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