A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films
- DOI
- 10.1016/j.mee.2024.112210
- Published
- 2024-08
- Container
- Microelectronic Engineering
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1016/j.mee.2024.112210,
title = {A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films},
author = {S. Guillemin and L. Lachal and P. Gergaud and A. Grenier and F. Nemouchi and F. Mazen and Ph. Rodriguez},
year = {2024},
journal = {Microelectronic Engineering},
doi = {10.1016/j.mee.2024.112210},
url = {https://doi.org/10.1016/j.mee.2024.112210}
}RIS
TY - JOUR TI - A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films AU - S. Guillemin AU - L. Lachal AU - P. Gergaud AU - A. Grenier AU - F. Nemouchi AU - F. Mazen AU - Ph. Rodriguez PY - 2024 JO - Microelectronic Engineering DO - 10.1016/j.mee.2024.112210 UR - https://doi.org/10.1016/j.mee.2024.112210 ER -
APA
Guillemin, S., Lachal, L., Gergaud, P., Grenier, A., Nemouchi, F., Mazen, F., & Rodriguez, P. (2024). A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films. Microelectronic Engineering. https://doi.org/10.1016/j.mee.2024.112210
Source records
- hal · retrieved 2026-09-25T01:30:00.645Z