Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction

Jon de Vecchy, Jean-Hervé Tortai, Maxime Besacier, Delphine Le Cunff, Bernard Pelissier

Open source

DOI
10.1016/j.mee.2025.112345
Published
2025-11
Container
Microelectronic Engineering
Publisher
Elsevier BV
Open access
unknown

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BibTeX

@article{allodium:10.1016/j.mee.2025.112345,
  title = {Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction},
  author = {Jon de Vecchy and Jean-Hervé Tortai and Maxime Besacier and Delphine Le Cunff and Bernard Pelissier},
  year = {2025},
  journal = {Microelectronic Engineering},
  doi = {10.1016/j.mee.2025.112345},
  url = {https://doi.org/10.1016/j.mee.2025.112345}
}

RIS

TY  - JOUR
TI  - Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction
AU  - Jon de Vecchy
AU  - Jean-Hervé Tortai
AU  - Maxime Besacier
AU  - Delphine Le Cunff
AU  - Bernard Pelissier
PY  - 2025
JO  - Microelectronic Engineering
DO  - 10.1016/j.mee.2025.112345
UR  - https://doi.org/10.1016/j.mee.2025.112345
ER  - 

APA

Vecchy, J. D., Tortai, J., Besacier, M., Cunff, D. L., & Pelissier, B. (2025). Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction. Microelectronic Engineering. https://doi.org/10.1016/j.mee.2025.112345

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