Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction
- DOI
- 10.1016/j.mee.2025.112345
- Published
- 2025-11
- Container
- Microelectronic Engineering
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.mee.2025.112345,
title = {Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction},
author = {Jon de Vecchy and Jean-Hervé Tortai and Maxime Besacier and Delphine Le Cunff and Bernard Pelissier},
year = {2025},
journal = {Microelectronic Engineering},
doi = {10.1016/j.mee.2025.112345},
url = {https://doi.org/10.1016/j.mee.2025.112345}
}RIS
TY - JOUR TI - Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction AU - Jon de Vecchy AU - Jean-Hervé Tortai AU - Maxime Besacier AU - Delphine Le Cunff AU - Bernard Pelissier PY - 2025 JO - Microelectronic Engineering DO - 10.1016/j.mee.2025.112345 UR - https://doi.org/10.1016/j.mee.2025.112345 ER -
APA
Vecchy, J. D., Tortai, J., Besacier, M., Cunff, D. L., & Pelissier, B. (2025). Hybrid metrology investigation combining Raman and ellipsometry spectroscopy applied to in line GeSbTe crystallization measurements and deep learning approaches for accurate prediction. Microelectronic Engineering. https://doi.org/10.1016/j.mee.2025.112345
Source records
- crossref · retrieved 2026-09-25T11:48:24.981Z