Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer

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DOI: 10.1016/j.memori.2024.100110
Published: 08
Container: Memories - Materials, Devices, Circuits and Systems
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1016/j.memori.2024.100110,
  title = {Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture},
  author = {Ayse Sünbül and David Lehninger and Amir Pourjafar and Shouzhuo Yang and Franz Müller and Ricardo Olivo and Thomas Kämpfe and Konrad Seidel and Lukas Eng and Maximilian Lederer},
  year = {2024},
  journal = {Memories - Materials, Devices, Circuits and Systems},
  doi = {10.1016/j.memori.2024.100110},
  url = {https://doi.org/10.1016/j.memori.2024.100110}
}

RIS

TY  - JOUR
TI  - Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture
AU  - Ayse Sünbül
AU  - David Lehninger
AU  - Amir Pourjafar
AU  - Shouzhuo Yang
AU  - Franz Müller
AU  - Ricardo Olivo
AU  - Thomas Kämpfe
AU  - Konrad Seidel
AU  - Lukas Eng
AU  - Maximilian Lederer
PY  - 2024
JO  - Memories - Materials, Devices, Circuits and Systems
DO  - 10.1016/j.memori.2024.100110
UR  - https://doi.org/10.1016/j.memori.2024.100110
ER  -

APA

Sünbül, A., Lehninger, D., Pourjafar, A., Yang, S., Müller, F., Olivo, R., Kämpfe, T., Seidel, K., Eng, L., & Lederer, M. (2024). Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture. Memories - Materials, Devices, Circuits and Systems. https://doi.org/10.1016/j.memori.2024.100110

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doaj · retrieved 2026-09-27T03:17:51.903Z