A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI
- DOI
- 10.1016/j.microrel.2016.07.073
- Published
- 2016-09-20
- Container
- Microelectronics Reliability
- Publisher
- Not recorded
- Open access
- no
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BibTeX
@article{allodium:10.1016/j.microrel.2016.07.073,
title = {A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI},
author = {You Wang and Hao Cai and Lirida Naviner and Weisheng Zhao and Jacques-Olivier Klein and X.X. Zhao and Yue Zhang},
year = {2016},
journal = {Microelectronics Reliability},
doi = {10.1016/j.microrel.2016.07.073},
url = {https://doi.org/10.1016/j.microrel.2016.07.073}
}RIS
TY - JOUR TI - A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI AU - You Wang AU - Hao Cai AU - Lirida Naviner AU - Weisheng Zhao AU - Jacques-Olivier Klein AU - X.X. Zhao AU - Yue Zhang PY - 2016 JO - Microelectronics Reliability DO - 10.1016/j.microrel.2016.07.073 UR - https://doi.org/10.1016/j.microrel.2016.07.073 ER -
APA
Wang, Y., Cai, H., Naviner, L., Zhao, W., Klein, J., Zhao, X., & Zhang, Y. (2016). A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2016.07.073