A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI

You Wang, Hao Cai, Lirida Naviner, Weisheng Zhao, Jacques-Olivier Klein, X.X. Zhao, Yue Zhang

Open source

DOI
10.1016/j.microrel.2016.07.073
Published
2016-09-20
Container
Microelectronics Reliability
Publisher
Not recorded
Open access
no

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BibTeX

@article{allodium:10.1016/j.microrel.2016.07.073,
  title = {A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI},
  author = {You Wang and Hao Cai and Lirida Naviner and Weisheng Zhao and Jacques-Olivier Klein and X.X. Zhao and Yue Zhang},
  year = {2016},
  journal = {Microelectronics Reliability},
  doi = {10.1016/j.microrel.2016.07.073},
  url = {https://doi.org/10.1016/j.microrel.2016.07.073}
}

RIS

TY  - JOUR
TI  - A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI
AU  - You Wang
AU  - Hao Cai
AU  - Lirida Naviner
AU  - Weisheng Zhao
AU  - Jacques-Olivier Klein
AU  - X.X. Zhao
AU  - Yue Zhang
PY  - 2016
JO  - Microelectronics Reliability
DO  - 10.1016/j.microrel.2016.07.073
UR  - https://doi.org/10.1016/j.microrel.2016.07.073
ER  - 

APA

Wang, Y., Cai, H., Naviner, L., Zhao, W., Klein, J., Zhao, X., & Zhang, Y. (2016). A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2016.07.073

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