Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories
- DOI
- 10.1016/j.microrel.2016.07.096
- Published
- 2016-09
- Container
- Microelectronics Reliability
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.microrel.2016.07.096,
title = {Impact of resistive paths on NVM array reliability: Application to Flash \& ReRAM memories},
author = {P. Canet and J. Postel-Pellerin and H. Aziza},
year = {2016},
journal = {Microelectronics Reliability},
doi = {10.1016/j.microrel.2016.07.096},
url = {https://doi.org/10.1016/j.microrel.2016.07.096}
}RIS
TY - JOUR TI - Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories AU - P. Canet AU - J. Postel-Pellerin AU - H. Aziza PY - 2016 JO - Microelectronics Reliability DO - 10.1016/j.microrel.2016.07.096 UR - https://doi.org/10.1016/j.microrel.2016.07.096 ER -
APA
Canet, P., Postel-Pellerin, J., & Aziza, H. (2016). Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories. Microelectronics Reliability. https://doi.org/10.1016/j.microrel.2016.07.096
Source records
- crossref · retrieved 2026-11-10T06:35:27.069Z