THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy
- DOI
- 10.1016/j.opelre.2018.08.002
- Published
- 2018-12
- Container
- Opto-Electronics Review
- Publisher
- Polish Academy of Sciences Chancellery
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1016/j.opelre.2018.08.002,
title = {THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy},
author = {J. Marczewski and D. Coquillat and W. Knap and C. Kolacinski and P. Kopyt and K. Kucharski and J. Lusakowski and D. Obrebski and D. Tomaszewski and D. Yavorskiy and P. Zagrajek and R. Ryniec and N. Palka},
year = {2018},
journal = {Opto-Electronics Review},
doi = {10.1016/j.opelre.2018.08.002},
url = {https://doi.org/10.1016/j.opelre.2018.08.002}
}RIS
TY - JOUR TI - THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy AU - J. Marczewski AU - D. Coquillat AU - W. Knap AU - C. Kolacinski AU - P. Kopyt AU - K. Kucharski AU - J. Lusakowski AU - D. Obrebski AU - D. Tomaszewski AU - D. Yavorskiy AU - P. Zagrajek AU - R. Ryniec AU - N. Palka PY - 2018 JO - Opto-Electronics Review DO - 10.1016/j.opelre.2018.08.002 UR - https://doi.org/10.1016/j.opelre.2018.08.002 ER -
APA
Marczewski, J., Coquillat, D., Knap, W., Kolacinski, C., Kopyt, P., Kucharski, K., Lusakowski, J., Obrebski, D., Tomaszewski, D., Yavorskiy, D., Zagrajek, P., Ryniec, R., & Palka, N. (2018). THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy. Opto-Electronics Review. https://doi.org/10.1016/j.opelre.2018.08.002
Source records
- crossref · retrieved 2026-09-26T09:41:00.008Z