Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides
- DOI
- 10.1016/j.sse.2015.11.003
- Published
- 2016-02
- Container
- Solid-State Electronics
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.sse.2015.11.003,
title = {Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides},
author = {Jiang Cao and Alessandro Cresti and David Esseni and Marco Pala},
year = {2016},
journal = {Solid-State Electronics},
doi = {10.1016/j.sse.2015.11.003},
url = {https://doi.org/10.1016/j.sse.2015.11.003}
}RIS
TY - JOUR TI - Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides AU - Jiang Cao AU - Alessandro Cresti AU - David Esseni AU - Marco Pala PY - 2016 JO - Solid-State Electronics DO - 10.1016/j.sse.2015.11.003 UR - https://doi.org/10.1016/j.sse.2015.11.003 ER -
APA
Cao, J., Cresti, A., Esseni, D., & Pala, M. (2016). Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides. Solid-State Electronics. https://doi.org/10.1016/j.sse.2015.11.003
Source records
- crossref · retrieved 2026-09-25T16:42:47.184Z