Behavior of subthreshold conduction in junctionless transistors
- DOI
- 10.1016/j.sse.2016.06.007
- Published
- 2016-10
- Container
- Solid-State Electronics
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.sse.2016.06.007,
title = {Behavior of subthreshold conduction in junctionless transistors},
author = {So Jeong Park and Dae-Young Jeon and Laurent Montès and Mireille Mouis and Sylvain Barraud and Gyu-Tae Kim and Gérard Ghibaudo},
year = {2016},
journal = {Solid-State Electronics},
doi = {10.1016/j.sse.2016.06.007},
url = {https://doi.org/10.1016/j.sse.2016.06.007}
}RIS
TY - JOUR TI - Behavior of subthreshold conduction in junctionless transistors AU - So Jeong Park AU - Dae-Young Jeon AU - Laurent Montès AU - Mireille Mouis AU - Sylvain Barraud AU - Gyu-Tae Kim AU - Gérard Ghibaudo PY - 2016 JO - Solid-State Electronics DO - 10.1016/j.sse.2016.06.007 UR - https://doi.org/10.1016/j.sse.2016.06.007 ER -
APA
Park, S. J., Jeon, D., Montès, L., Mouis, M., Barraud, S., Kim, G., & Ghibaudo, G. (2016). Behavior of subthreshold conduction in junctionless transistors. Solid-State Electronics. https://doi.org/10.1016/j.sse.2016.06.007
Source records
- crossref · retrieved 2026-11-10T07:33:47.201Z