Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires
- DOI
- 10.1016/j.sse.2018.08.001
- Published
- 2018-08-16T11:13:33Z
- Container
- Solid-State Electronics, Volume 149, November 2018, Pages 6-14
- Publisher
- arXiv
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1016/j.sse.2018.08.001,
title = {Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires},
author = {Pedram Razavi and James C. Greer},
year = {2018},
journal = {Solid-State Electronics, Volume 149, November 2018, Pages 6-14},
doi = {10.1016/j.sse.2018.08.001},
url = {https://doi.org/10.1016/j.sse.2018.08.001}
}RIS
TY - JOUR TI - Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires AU - Pedram Razavi AU - James C. Greer PY - 2018 JO - Solid-State Electronics, Volume 149, November 2018, Pages 6-14 DO - 10.1016/j.sse.2018.08.001 UR - https://doi.org/10.1016/j.sse.2018.08.001 ER -
APA
Razavi, P., & Greer, J. C. (2018). Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires. Solid-State Electronics, Volume 149, November 2018, Pages 6-14. https://doi.org/10.1016/j.sse.2018.08.001
Source records
- arxiv · retrieved 2026-09-25T04:34:24.968Z