Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Pedram Razavi, James C. Greer

Open source

DOI
10.1016/j.sse.2018.08.001
Published
2018-08-16T11:13:33Z
Container
Solid-State Electronics, Volume 149, November 2018, Pages 6-14
Publisher
arXiv
Open access
yes

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BibTeX

@article{allodium:10.1016/j.sse.2018.08.001,
  title = {Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires},
  author = {Pedram Razavi and James C. Greer},
  year = {2018},
  journal = {Solid-State Electronics, Volume 149, November 2018, Pages 6-14},
  doi = {10.1016/j.sse.2018.08.001},
  url = {https://doi.org/10.1016/j.sse.2018.08.001}
}

RIS

TY  - JOUR
TI  - Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires
AU  - Pedram Razavi
AU  - James C. Greer
PY  - 2018
JO  - Solid-State Electronics, Volume 149, November 2018, Pages 6-14
DO  - 10.1016/j.sse.2018.08.001
UR  - https://doi.org/10.1016/j.sse.2018.08.001
ER  - 

APA

Razavi, P., & Greer, J. C. (2018). Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires. Solid-State Electronics, Volume 149, November 2018, Pages 6-14. https://doi.org/10.1016/j.sse.2018.08.001

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