3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot

Benjamin Bureau, Félix Beaudoin, Pericles Philippopoulos, Salvador Mir, Eva Dupont-Ferrier, Philippe Galy

Open source

DOI
10.1016/j.sse.2025.109285
Published
2026-01
Container
Solid-State Electronics
Publisher
Elsevier BV
Open access
unknown

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Cite this work

BibTeX

@article{allodium:10.1016/j.sse.2025.109285,
  title = {3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot},
  author = {Benjamin Bureau and Félix Beaudoin and Pericles Philippopoulos and Salvador Mir and Eva Dupont-Ferrier and Philippe Galy},
  year = {2026},
  journal = {Solid-State Electronics},
  doi = {10.1016/j.sse.2025.109285},
  url = {https://doi.org/10.1016/j.sse.2025.109285}
}

RIS

TY  - JOUR
TI  - 3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot
AU  - Benjamin Bureau
AU  - Félix Beaudoin
AU  - Pericles Philippopoulos
AU  - Salvador Mir
AU  - Eva Dupont-Ferrier
AU  - Philippe Galy
PY  - 2026
JO  - Solid-State Electronics
DO  - 10.1016/j.sse.2025.109285
UR  - https://doi.org/10.1016/j.sse.2025.109285
ER  - 

APA

Bureau, B., Beaudoin, F., Philippopoulos, P., Mir, S., Dupont-Ferrier, E., & Galy, P. (2026). 3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot. Solid-State Electronics. https://doi.org/10.1016/j.sse.2025.109285

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