3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot
- DOI
- 10.1016/j.sse.2025.109285
- Published
- 2026-01
- Container
- Solid-State Electronics
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.sse.2025.109285,
title = {3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot},
author = {Benjamin Bureau and Félix Beaudoin and Pericles Philippopoulos and Salvador Mir and Eva Dupont-Ferrier and Philippe Galy},
year = {2026},
journal = {Solid-State Electronics},
doi = {10.1016/j.sse.2025.109285},
url = {https://doi.org/10.1016/j.sse.2025.109285}
}RIS
TY - JOUR TI - 3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot AU - Benjamin Bureau AU - Félix Beaudoin AU - Pericles Philippopoulos AU - Salvador Mir AU - Eva Dupont-Ferrier AU - Philippe Galy PY - 2026 JO - Solid-State Electronics DO - 10.1016/j.sse.2025.109285 UR - https://doi.org/10.1016/j.sse.2025.109285 ER -
APA
Bureau, B., Beaudoin, F., Philippopoulos, P., Mir, S., Dupont-Ferrier, E., & Galy, P. (2026). 3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot. Solid-State Electronics. https://doi.org/10.1016/j.sse.2025.109285
Source records
- crossref · retrieved 2026-09-25T23:44:46.414Z