Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.

Luo C, Lv B, Xu C, Zhang D, Xia T, Zhao Z

Open source

DOI
10.1016/j.talanta.2026.130364
Published
2026 Jul 31
Container
Talanta
Publisher
Not recorded
Open access
unknown

Credibility signals

limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.

Show all credibility signals

Cite this work

BibTeX

@article{allodium:10.1016/j.talanta.2026.130364,
  title = {Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.},
  author = {Luo C and Lv B and Xu C and Zhang D and Xia T and Zhao Z},
  year = {2026},
  journal = {Talanta},
  doi = {10.1016/j.talanta.2026.130364},
  url = {https://doi.org/10.1016/j.talanta.2026.130364}
}

RIS

TY  - JOUR
TI  - Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.
AU  - Luo C
AU  - Lv B
AU  - Xu C
AU  - Zhang D
AU  - Xia T
AU  - Zhao Z
PY  - 2026
JO  - Talanta
DO  - 10.1016/j.talanta.2026.130364
UR  - https://doi.org/10.1016/j.talanta.2026.130364
ER  - 

APA

C, L., B, L., C, X., D, Z., T, X., & Z, Z. (2026). Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.. Talanta. https://doi.org/10.1016/j.talanta.2026.130364

Source records