Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.
- DOI
- 10.1016/j.talanta.2026.130364
- Published
- 2026 Jul 31
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- Talanta
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- Not recorded
- Open access
- unknown
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BibTeX
@article{allodium:10.1016/j.talanta.2026.130364,
title = {Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.},
author = {Luo C and Lv B and Xu C and Zhang D and Xia T and Zhao Z},
year = {2026},
journal = {Talanta},
doi = {10.1016/j.talanta.2026.130364},
url = {https://doi.org/10.1016/j.talanta.2026.130364}
}RIS
TY - JOUR TI - Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations. AU - Luo C AU - Lv B AU - Xu C AU - Zhang D AU - Xia T AU - Zhao Z PY - 2026 JO - Talanta DO - 10.1016/j.talanta.2026.130364 UR - https://doi.org/10.1016/j.talanta.2026.130364 ER -
APA
C, L., B, L., C, X., D, Z., T, X., & Z, Z. (2026). Oxygen-vacancy-related defects and interfacial electron transfer in SnO(2)/WO(3) heterojunctions for enhanced NO(2) sensing: Experimental and DFT calculations.. Talanta. https://doi.org/10.1016/j.talanta.2026.130364
Source records
- pubmed · retrieved 2026-09-26T22:48:30.059Z