WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
- DOI
- 10.1016/j.tsf.2012.09.093
- Published
- 2013-01
- Container
- Thin Solid Films
- Publisher
- Elsevier BV
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1016/j.tsf.2012.09.093,
title = {WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress},
author = {Tien-Yu Hsieh and Ting-Chang Chang and Te-Chih Chen and Ming-Yen Tsai and Yu-Te Chen},
year = {2013},
journal = {Thin Solid Films},
doi = {10.1016/j.tsf.2012.09.093},
url = {https://doi.org/10.1016/j.tsf.2012.09.093}
}RIS
TY - JOUR TI - WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress AU - Tien-Yu Hsieh AU - Ting-Chang Chang AU - Te-Chih Chen AU - Ming-Yen Tsai AU - Yu-Te Chen PY - 2013 JO - Thin Solid Films DO - 10.1016/j.tsf.2012.09.093 UR - https://doi.org/10.1016/j.tsf.2012.09.093 ER -
APA
Hsieh, T., Chang, T., Chen, T., Tsai, M., & Chen, Y. (2013). WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress. Thin Solid Films. https://doi.org/10.1016/j.tsf.2012.09.093
Source records
- crossref · retrieved 2026-09-24T17:00:47.197Z