Purity of III/V semiconductor precursors: trimethylgallium, triethylgallium, ethyldimethylindium, arsine, trimethylarsine and phosphine

W.D. Reents

Open source

DOI: 10.1016/s0003-2670(00)83904-5
Published: 1990
Container: Analytica Chimica Acta
Publisher: Elsevier BV
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1016/s0003-2670-00-83904-5,
  title = {Purity of III/V semiconductor precursors: trimethylgallium, triethylgallium, ethyldimethylindium, arsine, trimethylarsine and phosphine},
  author = {W.D. Reents},
  year = {1990},
  journal = {Analytica Chimica Acta},
  doi = {10.1016/s0003-2670(00)83904-5},
  url = {https://doi.org/10.1016/s0003-2670(00)83904-5}
}

RIS

TY  - JOUR
TI  - Purity of III/V semiconductor precursors: trimethylgallium, triethylgallium, ethyldimethylindium, arsine, trimethylarsine and phosphine
AU  - W.D. Reents
PY  - 1990
JO  - Analytica Chimica Acta
DO  - 10.1016/s0003-2670(00)83904-5
UR  - https://doi.org/10.1016/s0003-2670(00)83904-5
ER  -

APA

Reents, W. (1990). Purity of III/V semiconductor precursors: trimethylgallium, triethylgallium, ethyldimethylindium, arsine, trimethylarsine and phosphine. Analytica Chimica Acta. https://doi.org/10.1016/s0003-2670(00)83904-5

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crossref · retrieved 2026-11-10T17:58:23.259Z